View TGF4124-EPU_1324845.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TGF4124-EPU
24 mm Discrete HFET
4124
* * * * *
0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm)
TGF4124-EPU RF Performance at F = 2.3 GHz Vd = 8.0 V, Vg = -1.1 V, Iq = 2.17 A and T A = 25C
50 Pout 48 46 PAE 50 45 40 35 30 25 20 15 10 5 20 22 24 26 28 30 32 55
44 42 40 38 36 34 32 30
Input Power (dBm)
1 TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com
Power Added Efficiency %
Output Power (dBm)
TGF4124-EPU RF Performance for Vd = 7.0 V, F = 2.3 GHz, and TA = 25 C Quiescent Id is 2.24 A (Vg = -1.1 V), 1.81 A (Vg = -1.3 V), and 1.37 A (Vg = -1.5 V)
140 130 Predicted Channel Temp (C) 120 110 100 90 Tch 80 70 60 50 40
55 50 Power Added Efficiency % 45 40 35 30 25 20 15 10 5 14 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V
42 41 40 39 38 37 36 35 Pout Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 34 33 32 Output Power (dBm)
2
13 12 Gain (dB) 11 10 9 8 7 20 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 21 22 23 24 25 26 27 28 Input Power (dBm) 29 30 31 32
TriQuint Semiconductor Texas Phone: 972 994-8465
Fax 972 994-8504
Web: www.triquint.com
TGF4124-EPU RF Performance for Vd = 8.0 V, F = 2.3 GHz, and TA = 25 C Quiescent Id is 2.17 A (Vg = -1.1 V), 1.80 A (Vg = -1.3 V), and 1.40 A (Vg = -1.5 V)
150 140 Predicted Channel Temp (C) 130 120 110 100 90 80 70 60 50
55 50 Power Added Efficiency % 45 40 35 30 25 20 15 10 5 14 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V
42 41 40 39 38 Tch 37 36 35 Pout Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 34 33 32 Output Power (dBm)
3
13 12 Gain (dB) 11 10 9 8 7 20 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 21 22 23 24 25 26 27 28 Input Power (dBm) 29 30 31 32
TriQuint Semiconductor Texas Phone: 972 994-8465
Fax 972 994-8504
Web: www.triquint.com
TGF4124-EPU RF Performance for Vd = 9.0 V, F = 2.3 GHz, and TA = 25 C Quiescent Id is 2.11 A (Vg = -1.79 V), 1.79 A (Vg = -1.3 V), and 1.43 A (Vg = -1.5 V)
170 160 Predicted Channel Temp (C) 150 140 130 120 110 100 90 80 70 60
55 50 Power Added Efficiency % 45 40 35 30 25 20 15 10 5 14 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V
42 41 40 Output Power (dBm)
4
39 38 Tch 37 36 35 Pout Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 34 33 32 31
13 12 Gain (dB) 11 10 9 8 7 20 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 21 22 23 24 25 26 27 Input Power(dBm) 28 29 30 31 32
TriQuint Semiconductor Texas Phone: 972 994-8465
Fax 972 994-8504
Web: www.triquint.com
DC Characteristics for the TGF4124-EPU
DC probe Parameters IDSS GM VP BVGS BVGD Drain Saturation Current Transconductance Pinch Off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Nominal 5880 3960 -1.85 -22 -22 Unit mA mS V V V
Example of DC I-V Curves Vg = 0.0 V to -2.75 V in 0.25 steps TA = 25 C
6000 5500 5000 4500
Drain Current (mA)
4000 3500 3000 2500 2000 1500 1000 500 0 0 1 2 3 4 5 6 7 8 9
D r a in V o l t a g e ( V )
Absolute Maximum Ratings
Drain-to-source Voltage, Vds................................. ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ..........12 V Gate-to-source Voltage, Vgs..................... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... .............-5 V to 0 V Mounting Temperature.................... ... ... ... ... ... ... ... ... ... ... ... ... ... ... .... ............ ... ... ... ... ... 320C Storage Temperature........................ ... ... ... ... ... ... ... ... ... ... ... ... ... .... ................ -65C to 200C Power Dissipation.............. ... ... ... ... .... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ...refer to Thermal Model Operating Channel Temperature... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ... ..... .refer to Thermal Model
Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in this document is not implied. Exposure to absolute maximum rated conditions for extended periods of time may affect device reliability.
5 TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com
TGF4124-EPU Linear Model Vds = 8 V and Ids = 1.84 A at T = 25 C
FET Elements Lg = .00103 nH Rg = 0.53233 Rgs = 4086 Ri = 0.030 Cgs = 26.9096 pF Cdg = 0.99024 pF Rdg = 102026 Rs = 0.04943 Ls = 0.00808 nH Rds = 5.39715 Cds = 4.30372 pF Rd = 0.19448 Ld = 0.00965 nH VCCS Parameters M = 2.668 S A=0 R1 = 1E19 R2 = 1E19 F=0 T = 4.50 pS Cdg
Rdg Lg G Ri Rgs R1 Cgs R2 Rds Cds Rg VCCS Rd Ld D
Rs
Ls
Freq-GHz MAG-S11 ANG-S11 MAG-S21 ANG-S21 MAG-S12 ANG-S12 MAG-S22 ANG-S22 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.9655 0.96563 0.96577 0.96596 0.96619 0.96646 0.96676 0.96708 0.96742 0.96777 -162.057 -171.022 -174.063 -175.605 -176.548 -177.19 -177.663 -178.031 -178.329 -178.579 3.91809 1.9714 1.3101 0.97656 0.77485 0.6393 0.54171 0.46793 0.41013 0.36358 95.2201 86.9895 81.7652 77.3514 73.316 69.5245 65.9265 62.5019 59.243 56.1476 0.00638 0.00651 0.00665 0.00684 0.00709 0.0074 0.00778 0.00822 0.00874 0.00931 15.0344 16.8356 21.478 26.7416 32.1233 37.4067 42.4614 47.2001 51.567 55.5339 0.85618 0.8587 0.86075 0.86327 0.8663 0.8698 0.87367 0.87783 0.88221 0.88672 -178.832 -178.929 -178.77 -178.562 -178.354 -178.163 -177.998 -177.864 -177.762 -177.694
6 TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com
Thermal Model of TGF4124-EPU
Predicted Channel Temperature vs Base Plate Temperature 250 240 230 220 210 200 190 180 170 160 150 140 130 120 110 100 90 80 70 60 50 25 35
With a .020" CM15 (15/85 Copper Molybdenum) carrier plate solder attached using 0.0015" AuSn (80/20) solder
Channel Temperature (C)
Pd = 7 Watts Pd = 13 Watts 45 55 65 75 85 95 105 115 125
Base Plate Temperature (C)
Tch = 0.6458 + 5.886 x Pd + 0.0882 x Pd 2 + (1.001 + 0.01633 x Pd + 0.0001833 x Pd 2) x Tbase (Predicted Channel Temperature equation for the given assembly stack up) This model assumes a perfect solder connection (no voids) between the FET and the carrier plate.
HFETChannel Temperature vs Median Life 350
300 Channel Temperature (C)
250
200
150
100 0 1 2 3 4 5 6 7 8 9 10 Median Life (10^X Hours)
7 TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com
Mechanical Drawing of TGF4124-EPU
81.0 (2.057) 76.3 (1.938) 69.0 (1.753) 61.6 (1.565)
65.3 (1.659)
48.8 (1.239)
52.5 (1.333) 45.1 (1.145)
Gate
32.2 (0.819)
35.9 (0.913) 28.5 (0.725)
15.7 (0.399)
19.4 (0.493) 12.0 (0.305)
4.7 (0.119) 0.0 0.0 7.4 (0.187) 28.1 (0.714) 36.0 (0.914)
Alternate drain pad
Alternate gate pad
Units: mils (mm) Thickness: 4.0 (0.10) Gate pad sizes are 4.0 x 4.0 (0.10 x 0.10) Drain pad sizes are 4.7 x 14.5 (0.12 x 0.37) A minimum of four gate bonds and eight drain bonds is recommended for operation. Sources are connected to backside metalization. Alternate gate and drain pads are located on either end of the FET for paralleling TGF4124-EPUs.
Drain
8 TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com
Application circuit for the TGF4124-EPU at 2.3 GHz
The FET is soldered using AuSn solder at 300 for 30 secs. Input and output matching networks are C 0.381 mm ZrSn Tioxide substrates (Er = 38). The design load impedance is between 3 and 4 with the 8 pF output capacitance of the FETincluded in the output network. For further explanation refer to the application note " Designing High Efficiency Amplifiers using HFETs" The carrier plate is 0.51 mm . gold plated copper molybdenum. Gold wire 0.018 mm diameter is used for the bonds. Four gate bonds are required with a length of 0.42 mm. Eight drain bonds are required with a length of 0.42 mm. Bondwire end points on the FET are in the middle of the bond pads. Refer to the figures above for bondwire locations. Connection between the 50 ohm line input to the input match is made by a parallel RC network. R1 in this network is 10 ohms, and C1 is 5.6 pF. R1 and C1 are surface mount 0603 piece parts.
9 TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com

▲Up To Search▲

Price & Availability of TGF4124-EPU

	To Download TGF4124-EPU Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .